Impact of thermal annealing inducing oxidation process on the crystalline powder of In2S3.

Simple item page
dc.contributor.authorRevaprasadu, Neerish
dc.contributor.authorTimoumi, A
dc.contributor.authorZayoud, W
dc.contributor.authorSharma, A
dc.contributor.authorKraini, M
dc.contributor.authorBouguila, N
dc.contributor.authorHakamy, A
dc.contributor.authorAlaya, S
dc.coverage.conferenceissn
dc.date.accessioned2025-11-25T08:47:15Z
dc.date.available2025-11-25T08:47:15Z
dc.date.issued2020
dc.departmentNameChemistry
dc.description.abstractInorganic two-dimensional semiconductor indium sulfide (In2S3) has recently attracted considerable attention as a buffer material in the field of thin-film photovoltaics, photo electrochemical cells and other energy-related applications. Compared with this growing interest, however, detailed characterizations of the commercial material are not done. The present investigation deals with the systematic investigation of the physical properties of powdered β-indium sulfide (In2S3). The crystalline structure, the composition, and the morphological properties of the samples were characterized using a range of techniques such as X-ray powder diffraction (XRD), Fourier transform infrared (FTIR), X-ray photoelectron spectroscopy (XPS), and transmission electron microscopy (TEM). X-ray diffraction patterns revealed mixed peaks of In2S3 and In2O3 for the sample annealed at 400 °C. The In2O3 peaks were crystalline with a cubic phase with a (222) preferential orientation. These results were supported by the FTIR, and XPS studies. Thus, a significant correlation was established between the annealing tem perature and the TEM images. The main conclusion of the paper opens the possibility of using In2S3 layers for solar cells.
dc.facultyFaculty of Science, Agriculture and Engineering
dc.format.preprintNo
dc.identifier.citationTimoumi, A., Zayoud, W., Sharma, A., Kraini, M., Bouguila, N., Hakamy, A., Revaprasadu, N. and Alaya, S., 2020. Impact of thermal annealing inducing oxidation process on the crystalline powder of In2S3. Journal of Materials Science: Materials in Electronics, 31(16), pp.13636-13645.
dc.identifier.issn1573-482X
dc.identifier.otherhttps://doi.org/10.1007/s10854-020-03921-7
dc.identifier.urihttp://hdl.handle.net/10530/58391
dc.inproceedingsissn
dc.issuenumber31 / 16
dc.keynoteissn
dc.pages13636 - 13645
dc.peerreviewedYes
dc.publisherSpringer Nature
dc.subjectIndium sulfide
dc.subjectX-ray powder diffraction
dc.subjectFourier transform infrared
dc.subjectPhoto electrochemical cells
dc.titleImpact of thermal annealing inducing oxidation process on the crystalline powder of In2S3.
dc.title.journalJournal of Materials Science: Materials in Electronics
dc.typeJournal Article
dspace.entity.typePublication
relation.isAuthorOfPublication4f5ba125-1cb1-44e5-9a57-4ba68acced20
relation.isAuthorOfPublication.latestForDiscovery4f5ba125-1cb1-44e5-9a57-4ba68acced20
relation.isOrgUnitOfPublicationf1393221-35d5-449b-8479-f39d2950718d
relation.isOrgUnitOfPublication.latestForDiscoveryf1393221-35d5-449b-8479-f39d2950718d
Files:
Original bundle
Now showing 1 - 1 of 1
Thumbnail Image
Name:
Revaprasadu_Neerish_2020.pdf
Size:
3.48 MB
Format:
Adobe Portable Document Format

Revaprasadu_Neerish_2020.pdf (3.48 MB)

Download
License bundle
Now showing 1 - 1 of 1
No Thumbnail Available
Name:
license.txt
Size:
1.71 KB
Format:
Item-specific license agreed upon to submission
Description:

license.txt (1.71 KB)

Download
Collections: Articles