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- In this work the effect of swift heavy ions (SHIs) (710 MeV Bi51+) irradiation and annealing on selenium (Se) pre- implanted silicon carbide (SiC) was investigated. SiC samples were implanted individually with 200 keV Se ions to a fluence of 1 ×1016 cm2 at both room temperature (RT) and 350 ◦C. Following this, some pre-implanted samples were irradiated at RT with 710 MeV Bi51+ions to a fluence of 1 ×1013 cm2. These irradiated samples then underwent sequential annealing at temperatures ranging from 1000 to 1200 ◦C, in 100 ◦C increments, for 10 h. The samples were characterized using Raman, SEM, TEM, and RBS. Sequential annealing of the RT pre- implanted and then irradiated sample up to 1200 ◦C led to recrystallization of the highly defective SiC layer into strained nano-crystalline SiC with cavities, accompanied by the formation of Se precipitates. In contrast, sequential annealing of the 350 ◦C pre-implanted and then irradiated sample up to 1200 ◦C also caused recrystallization of the defective SiC layer into nano-crystalline SiC, but with minor strained regions. No loss or migration of Se was detected in either the RT or 350 ◦C pre-implanted samples following SHIs irradiation and annealing up to 1200 ◦C.
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